The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.
通过在波函数中考虑量子线的限制方向和非限制方向的相关性 ,计算了 Ga As/ Ga1 - x Alx As量子阱线中类氢杂质的束缚能和光致电离截面 。
The experimental result indicates that the photoionization cross-section of Ar is obviously affected by the pressure of Ar in the vicinity of the edge of L-absorption of Ar: the higher the pressure, the smaller the photoionization cross-section.
利用北京同步辐射装置 3W1B光束线产生的单色光作为光源 ,流气式无窗低压强双电离室作为气体容器 ,选择氩气作为实验气体 ,使用合适的公式和软件 ,实验测定了能量从 180到 2 70eV范围内若干压强点处光致电离截面与能量的关系曲线 。
