The lifetime mapping of a p+-InP/n-InGaAs/n-InP double heterojunction wafer is measured by the microwave photoconductivity decay technique,and the mechanism of photoconductivity decay in this material is analyzed.
采用微波反射光电导衰减法测量了p+-InP/n-InGaAs/n-InP双异质结材料的非平衡载流子寿命分布,通过对非平衡载流子浓度在p+n结中衰减过程的分析,建立了在此结构材料中微波反射光电导衰退法测试少子寿命与器件参数之间的联系,并且解释了寿命测试值随温度降低而减小的反常行为。