A novel pressure sensor with a mesa structure diaphragm is presented,which has a mesa structure diaphragm rather than the planar one.
提出了一种新的光纤压力传感器的设计,该传感器敏感膜采用了台面结构而非传统的平面结构。
The material structure was grown on(001)semi-induction InP wafer by molecular beam epitaxy,and the device was fabricated with a mesa structure.
结构材料由分子束外延制备,衬底片为(001)半绝缘InP单晶片,器件制作选用台面结构。
The SiGe/Si HBT are fabricated with double mesa structure by usin g the emitter of 4μm in width and 4μm×18μm in size.
采用双台面结构制造了 Si Ge/ Si NPN异质结晶体管 。
