The as grown, ZnO films annealed after growth and annealed during growth(denoted as S1, S2 and S3, respectively) were grown on C plane sapphire substrate by plasma enhanced MOCVD and characterized by XRD and X ray photoelectron energy spectra.
利用等离子体增强型MOCVD设备 ,在C面蓝宝石上生长出了C轴取向的未退火、生长后一次退火和生长过程中多次退火的ZnO薄膜样品 ,并通过X光衍射和X光电子能谱对样品进行了表征 ,结果表明生长过程中多次退火的样品具有较高的质量 ,O/Zn原子比较大 ,且受空气中氧和水汽的影响最小。
