A full analytical breakdown model for thin epitaxial RESURF LDMOS is present- ed in this paper.
提出硅基薄外延RESURF LDMOS不全耗尽和完全耗尽的完全耐压模型。
The deformation of slope caused by change of ground water level was investigated by adopting a fully coupled procedure and the stat.
本文采用完全耦合有效应力分析程序和与状态相关的剪胀性砂土模型模拟斜坡因地下水位变化而发生的变形。