To reduce power leakage of deep sub-micron metal-oxide-semiconductor(CMOS) circuit in standby mode and search the minimum leakage vector(MLV) producing minimum leakage power,a linear programming(LP) model based on leakage power library was proposed.
为了减小深亚微米互补金属氧化物半导体(CMOS)电路待机模式下的泄漏功耗,须寻找使电路泄漏功耗最低的最小泄漏向量(MLV)。
