When SiGe HBT is in the case of normal operation, depleted approximation is not suited, and the influence of movable charge should be taken into account when considering of their junction capacitance.
在考虑SiGeHBT的势垒电容时 ,通常的耗尽层近似不再适用 ,应考虑可动载流子的影响 。
Thus differential capacitance should be adopted when considering their junction capacitance.
当SiGeHBT处于交流放大状态时,发射结空间电荷区和集电结空间电荷区存在可动电荷,因此,在考虑它们的势垒电容时,应采用微分电容。
