Along with the changes of filmed time and solidified temperature,the Si diffused film’s thickness was different the change of the film s resistor was affected which restricted the density of surface power s better.
利用化学喷涂工艺在石英管材上制作SnO2薄膜,成膜时在石英管表面和SnO2薄膜的界面上形成Si扩散层,随着成膜时间、固化温度的改变,Si扩散层的厚度不同,直接影响薄膜电阻率的改变,严重制约着薄膜面功率密度的改善。
