The emission microscopy (EMMI) test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure,named a poly-edge structure.
通过结合发光显微镜(EMMI)测试和poly-edge电容测试结构很好地控制了多晶硅刻蚀时间,避免了栅极氧化膜的早期失效。
Size and morphology control of highly-ordered nano-silicon pillar fabricated by direct nanosphere lithography;
基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制
