The implantation homogeneity of Type-100 MEVVA source ion implantor was therefore studied.
为此开展了100型MEVVA源注入机大批量的工件注入均匀性的研究。
Along with the development of integrated circuit,the traditional batch implantation has already can t satisfy a current process,the single wafer implantation with the mechanical scanning solved the technique problem,also controlling the cost risk,having a series of advantage of higher accuracy,less contamination etc,becoming the current high level ion implanter the best choice.
随着集成电路工艺技术的提高,对离子注入提出更高的要求,传统的批注入已不能满足当前的工艺,从而开发出了适应当前工艺的单晶片注入的机械扫描技术。
