We have studied the dependence of surface profile,post-etch composition,formation of polymer on the effect of ICP parameters(ICP power,gas ratio,chamber pressure) by using micro regional XPS and SEM(scanning electron microscopy).
文章将ICP刻蚀技术应用于刻蚀HgCdTe,使用微区X射线光电子光谱学(XPS)、扫描电子显微镜(SEM)等表面分析技术研究了ICP各工艺参数,包括ICP功率、气体成分与配比、腔体压力等对刻蚀表面形貌、刻蚀后表面成分、聚合物形成的影响。