Based on the dielectric continuum phonon model, uniaxial model and Lei-Ting balance equation, the electronic mobility parallel to the interfaces for wurtzite (WZ) and zincblende (ZB) AlN/GaN quantum-well (QW) heterostructures is discussed by taking the influence of confined and interface phonon modes into account.
本文在介电连续模型和单轴模型的框架下,采用雷-丁平衡方程理论,考虑有限深量子阱中界面光学声子模和局域体光学声子模的影响,分别计算了纤锌矿型和闪锌矿型AlN/GaN量子阱中电子平行于异质结界面方向的迁移率,并给出迁移率随阱宽及温度的变化关系。
The possibility of utilizing low calciferous rock and blende tails in the cement industry has been studied.
研究利用低钙石和闪锌尾矿代替粘土煅烧高质量的水泥熟料。